DDR SDRAM
DDR SDRAM or double-data-rate synchronous dynamic random access memory is a type of memory used in computers and consumer electronics. It achieves greater bandwidth than the preceding single-data-rate SDRAM by transferring data on both the rising and falling edges of the clock signal.
64Mb DDR
| Part No. |
Organization |
Voltage |
Speed Grade |
Package |
Status* |
RoHS |
Purchase |
|
|
4Mbitx16 |
4 Banks |
2.6V±0.1V |
-4 |
250 MHz |
CL3/CL4 |
Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant |
NRFND |
Y |
 |
|
2.5V±0.2V |
-5/-5I |
200 MHz |
CL3 |
|
-6/-6I |
166 MHz |
CL2.5 |
|
W9464G6JH |
4Mbitx16 |
4 Banks |
2.4V~2.7V |
-4 |
250 MHz |
CL3/CL4 |
Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant |
P |
Y |
 |
|
2.5V±0.2V |
-5/-5I |
200 MHz |
CL3 |
* Status: P= Mass Production、S(Time)=Samples(Ready Time)、UD (Time)= Under Development(Ready Time)、NRFND=Not Recommended For New Design、EOL=End of life.
128Mb DDR
| Part No. |
Organization |
Voltage |
Speed Grade |
Package |
Status* |
RoHS |
Purchase |
| W9412G6IH |
8Mbitx16 |
4 Banks |
2.5V ±0.1V |
-4 |
250 MHz |
CL3/CL4 |
Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant |
NRFND |
Y |
|
|
2.5V±0.2V |
-5/-5I |
200 MHz |
CL3 |
|
-6/-6I |
166 MHz |
CL2.5 |
| W9412G6JH |
8Mbitx16 |
4 Banks |
2.4V~2.7V |
-4 |
250 MHz |
CL3/CL4 |
Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant |
P |
Y |
|
|
2.5V±0.2V |
-5/-5I/-5K |
200 MHz |
CL3 |
|
-6I |
| W9412G6JB |
8Mbitx16 |
4 Banks |
2.5V±0.2V |
-5
|
200 MHz |
CL3 |
Packaged in 60 Ball(8x13mm2)TFBGA, using Lead free materials with RoHS compliant |
P |
Y |
|
| W9412G2IB |
4Mbitx32 |
4 Banks |
2.5V ±0.1V |
-4 |
250 MHz |
CL3/CL4 |
Packaged in 144L LFBGA, using Lead free materials with RoHS compliant |
P |
Y |
|
|
2.5V±0.2V |
-5/-5I |
200 MHz |
CL3 |
|
-6/-6I |
166 MHz |
CL2.5 |
* Status: P= Mass Production、S(Time)=Samples(Ready Time)、UD (Time)= Under Development(Ready Time)、NRFND=Not Recommended For New Design、EOL=End of life.
256Mb DDR
| Part No. |
Organization |
Voltage |
Speed Grade |
Package |
Status* |
RoHS |
Purchase |
|
W9425G6EH |
16Mbitx16 |
4 Banks |
2.6V ±0.1V |
-4 |
250 MHz |
CL3 |
Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant |
NRFND |
Y |
|
|
2.5V ±0.2V |
-5/-5I |
200 MHz |
|
-6/-6I |
166 MHz |
CL2.5 |
|
W9425G6JH |
16Mbitx16 |
4 Banks |
2.4V~2.7V |
-4 |
250 MHz |
CL3/CL4 |
Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant |
P |
Y |
|
|
2.5V ±0.2V |
-5/-5I/-5A |
200 MHz |
CL3 |
|
W9425G6JB
|
16Mbitx16 |
4 Banks |
2.5V ±0.2V |
-5/-5I |
200MHz |
CL3 |
Packaged in 60 Ball TFBGA, using lead free materials with RoHS compliant |
P |
Y |
|
|
|
32Mbitx8 |
4 Banks |
2.5V±0.2V |
-5 |
200 MHz |
CL3 |
Packaged in TSOP II 66-pin, using Lead free materials with RoHS compliant |
EOL |
Y |
|
* Status: P= Mass Production、S(Time)=Samples(Ready Time)、UD (Time)= Under Development(Ready Time)、NRFND=Not Recommended For New Design、EOL=End of life.
Contact us:
SDRAM@winbond.com
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